Description
The SST34HF1621/1641 ComboMemory devices integrate a 1M x16 CMOS flash memory bank with a 256K x8/ 128K x16 or 512K x8/ 256K x16 CMOS SRAM memory bank in a Multi-Chip Package (MCP).
Features
- Flash Organization: 1M x16.
- Dual-Bank Architecture for Concurrent Read/Write Operation.
- 16 Mbit: 12 Mbit + 4 Mbit.
- SRAM Organization:.
- 2 Mbit: 256K x8 or 128K x16.
- 4 Mbit: 512K x8 or 256K x16.
- Single 2.7-3.3V Read and Write Operations.
- Superior Reliability.
- Endurance: 100,000 Cycles (typical).
- Greater than 100 years Data Retention.
- Low Power Consumption:.
- Active Current: 25 mA (typical).
SST34HF1621_SiliconStorageTechnology.pdf