p-cha.,.nel JFETs designed for Small-Siglllal Amplifiers H Performance Curves PC PD See Section 4 BENEFITS Low Supply Voltage Operation V GS(off) Typically 1.2 V ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain and Gate-Source Voltage (Note 3) 30V Gate Current, Forwal"d Biased (Note 1) 50mA Total Device Dissipation (Derate 2mW/oC) 300 mW Storage Temperature Range -65 to +200°C TO-18 See Section 5 "~: h o }c s ELECTRICAL CHARACTERIS.