SSF2318E
SilikrON Semiconductor ↗ Co
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Mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ava
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SSF2318E - 20V N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF2318E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operate with gate voltages as low as 2.5V.
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SSF2312 - Battery protection
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SSF2312
DESCRIPTION
The SSF2312 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with.
SSF2314 - MOSFET
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SSF2314
DESCRIPTION
The SSF2314 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low.
SSF2315 - MOSFET
(Silikron Semiconductor)
Main Product Characteristics:
VDSS
-20V
RDS(on) 95mΩ (typ.)
ID -3A
SOT-23
Features and Benefits:
Advanced MOSFET process technology Special.
SSF2316E - Battery protection
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SSF2316E
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GENERAL FEATURES
● VDS = 20V,ID = 7A RDS(ON) < 35mΩ @ VGS=2.5V RDS(ON) < 30mΩ @ VGS=3.1V RDS(ON) < 24mΩ @ VGS=4V RDS(ON).
SSF2319GE - 20V P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
SSF2319GE
20V P-Channel MOSFET
VDSS
- 20V
RDS(on) 440mΩ (typ.) ID - 400mA
Features and Benefits
SOT-723
3: Part Mar.
SSF2300 - 20V N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V..
SSF2300 - MOSFET
(Silikron)
SSF2300
DESCRIPTION
The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low.
SSF2300A - Battery protection
(Silikron Semiconductor Co)
SSF2300A
..
DESCRIPTION
The SSF2300A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit.
SSF2300B - Battery protection
(Silikron Semiconductor Co)
SSF2300B
..
DESCRIPTION
The SSF2300B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wit.