SSF3341
SilikrON Semiconductor ↗
1.79MB
Mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ava
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SSF3341 - P-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS RDS(on)
ID
-30V 42mΩ (typ.)
-4.2A ①
SOT-23
Features and Benefits
Advanced MOSFET process technology Special .
SSF3341L - MOSFET
(Silikron Semiconductor)
SSF3341L
DESCRIPTION
The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.
SSF3341L - P-Channel MOSFET
(GOOD-ARK)
SSF3341L
30V P-Channel MOSFET
DESCRIPTION
The SSF3341L uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wi.
SSF3341UP - MOSFET
(Silikron)
Main Product Characteristics
VDSS RDS(on)
ID
-30V 44mΩ (typ.)
-4.2A ①
SOT-23
Features and Benefits
Advanced MOSFET process technology Special .
SSF3344 - MOSFET
(Silikron Semiconductor Co)
SSF3344
..
DESCRIPTION
The SSF3344 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with .
SSF3314E - MOSFET
(Silikron Semiconductor)
SSF3314E
DESCRIPTION
The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as l.
SSF3314E - N-Channel MOSFET
(GOOD-ARK)
DESCRIPTION
The SSF3314E uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.
SSF3322 - MOSFET
(Silikron Semiconductor)
SSF3322
DESCRIPTION
The SSF3322 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as .
SSF3324 - MOSFET
(Silikron Semiconductor Co)
Main Product Characteristics:
VDSS
30V
RDS(on) 26.5mΩ(typ.)
ID
5.8A ①
SSF3324
SOT-23
Marking and pin Assignments
Schematic Diagram
Features .
SSF3324 - N-Channel MOSFET
(GOOD-ARK)
Main Product Characteristics
VDSS
30V
RDS(on) 26.5mohm(typ.)
ID 5.8A ①
SOT23
Features and Benefits
Advanced trench MOSFET process technology .