SSF2N60

N-Channel enhancement mode power field effect transistors

Silikron

SSF2N60 Features

* Advanced Process Technology

* Special designed for PWM, load switching dan gene ral pur pose applications

* Ultra low on-r esistance with low gate charg e

* Fastswitching and re verse b ody reco very

* 150 ℃ operati ng temperatur e Description: The

SSF2N60 General Description

These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology. T his advance d technology has be en especially tailored t o minimize on-state resistance, provide superior switching performance, and withstand high ene rgy pulse in the .

SSF2N60 Datasheet (516.60 KB)

SSF2N60 Datasheet Preview — Preview of SSF2N60 PDF

Datasheet Details

Part number:

SSF2N60

Manufacturer:

Silikron

File Size:

516.60 KB

Description:

N-channel enhancement mode power field effect transistors.
SSF2N60 Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A TO220 Marking and pin Assignm ent .

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SSF2N60 N-Channel enhancement mode power field effect transistors Silikron

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SSF2N60 Features

SSF2N60 General Description

Datasheet Details

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Description:

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