SSF2N60 N-Channel enhancement mode power field effect transistors

Silikron

Description

SSF2N60 Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A TO220 Marking and pin Assignm ent .
These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology.

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Datasheet Specifications

Part number: SSF2N60
Manufacturer: Silikron
File Size: 516.60 KB
Datasheet: SSF2N60-Silikron.pdf
Description: N-Channel enhancement mode power field effect transistors

Features

* Advanced Process Technology

Applications

* Ultra low on-r esistance with low gate charg e
* Fastswitching and re verse b ody reco very

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SSF2N60 N-Channel enhancement mode power field effect transistors Silikron

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