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SSF2N60 N-Channel enhancement mode power field effect transistors

SSF2N60 Description

                                 SSF2N60  Main Product Characteristics: VDSS 600V RDS(on) ID 3.6ohm(typ.) 2A TO220    Marking and pin Assignm ent  .
These N-Ch annel en hancement mode power field ef fect transistors are produced usin g silikron proprietary MOSFET te chnology.

SSF2N60 Features

* Advanced Process Technology

SSF2N60 Applications

* Ultra low on-r esistance with low gate charg e
* Fastswitching and re verse b ody reco very

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Datasheet Details

Part number
SSF2N60
Manufacturer
Silikron
File Size
516.60 KB
Datasheet
SSF2N60-Silikron.pdf
Description
N-Channel enhancement mode power field effect transistors

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N-Channel enhancement mode power field effect transistors Silikron
Silikron SSF2N60-like datasheet