SSF3108H1U
Silikron
768.28kb
Mosfet. It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive ava
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📁 Related Datasheet
SSF3108H1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 6.2mΩ (typ.)
ID
15A ①
SOP-8
Features and Benefits:
Advanced MOSFET process technology Specia.
SSF3108H1X - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 6.5mΩ (typ.)
ID
15A ①
SOP-8
Features and Benefits:
Advanced MOSFET process technology Specia.
SSF3108DU - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
ID
30V 7mΩ(Typ.)
40A
TO-252 (DPAK)
Features and Benefits:
Advanced MOSFET process technology Specia.
SSF3108J2 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 5.8mΩ(typ.)
ID
18A
DFN2x2-6L Pin Assignments
Features and Benefits:
Advanced trench MOSFET pro.
SSF3108J7U - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 6.7mΩ (typ.)
ID
25A
Features and Benefits:
PQFN 5x6-8L
Advanced MOSFET process technology S.
SSF3108J8 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 6mΩ(typ.)
ID
22A
PDFN 3*3-8L
Features and Benefits:
Advanced MOSFET process technology Speci.
SSF3115H1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-30V
RDS(on) 11.5mΩ (typ.)
ID
-10A①
SOP-8
Features and Benefits:
Advanced MOSFET process technology Special .
SSF3115J7 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-30V
RDS(on) 10 mΩ (typ.)
ID
-26A
PDFN 5*6-8L
Features and Benefits:
Advanced MOSFET process technology .
SSF3115J8 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
-30V
RDS(on) 10.5mΩ (typ.)
ID
-24A
PDFN 3*3-8L
Features and Benefits:
Advanced MOSFET process technology .
SSF3117 - Schottky Diode
(Silikron Semiconductor Co)
SSF3117
..
DESCRIPTION
The SSF3117 uses advanced trench technology to provide excellent RDS(ON) and low gate charge . A Schottky dio.