SSF3018D Datasheet, Mosfet, Silikron Semiconductor Co

PDF File Details

Part number:

SSF3018D

Manufacturer:

SilikrON Semiconductor ↗ Co

File Size:

398.87kb

Download:

📄 Datasheet

Description:

N-channel mosfet. The SSF3018D is a new generation of middle voltage and high current N  –Channel enhancement mode trench power MOSFET.

Datasheet Preview: SSF3018D 📥 Download PDF (398.87kb)
Page 2 of SSF3018D Page 3 of SSF3018D

TAGS

SSF3018D
N-Channel
MOSFET
Silikron Semiconductor Co

📁 Related Datasheet

SSF3018 - N-Channel MOSFET (Silikron Semiconductor Co)
.. SSF3018 Feathers: „ „ „ „ „ Advanced trench process technology Special designed for Convertors and power controls High density c.

SSF3014 - N-Channel MOSFET (Silikron Semiconductor Co)
SSF3014 .. Feathers: „ „ „ Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c.

SSF3002EG1 - MOSFET (Silikron)
Main Product Characteristics: VDSS 30V RDS(on) 1ohm(typ.) ID 0.5A① SOT23 Features andBenefits:  Advanced trench MOSFET process technology  Spe.

SSF3006DB - MOSFET (Silikron)
Main Product Characteristics: VDSS 30V RDS(on) 3.6mΩ(Typ.) ID 90A TO-252 (DPAK) Features and Benefits:  Advanced MOSFET process technology  S.

SSF3006DBC - MOSFET (Silikron)
Main Product Characteristics: VDSS 30V RDS(on) 4.2mΩ(Typ.) ID 100A TO-252 (DPAK) Features and Benefits:  Advanced MOSFET process technology  .

SSF3022 - N-Channel MOSFET (Silikron Semiconductor Co)
SSF3022 Feathers: „ „ „ „ Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized aval.

SSF3022D - N-Channel MOSFET (Silikron Semiconductor Co)
SSF3022D Feathers: „ „ „ „ Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized ava.

SSF3028C1 - MOSFET (Silikron)
Main Product Characteristics: VDSS 30V RDS(on) 28mohm(typ.) ID 21A Features and Benefits: TO-252  Advanced MOSFET process technology  Special .

SSF3035L - MOSFET (Silikron)
Main Product Characteristics: VDSS RDS(on) ID -30V 22mΩ (typ.) -6A ① SOT23-3 Features and Benefits:  Advanced MOSFET process technology  Special.

SSF3036C - 30V Complementary MOSFET (GOOD-ARK)
Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A Features and Benefits  Advanced Process Technology.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts