SSF3022D
SilikrON Semiconductor ↗ Co
390.67kb
N-channel mosfet. The SSF3022 is a new generation of middle voltage and high current N –Channel enhancement mode trench power MOSFET. T
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SSF3022 - N-Channel MOSFET
(Silikron Semiconductor Co)
SSF3022
Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized aval.
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Main Product Characteristics:
VDSS
30V
RDS(on) 28mohm(typ.)
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TO-252
Advanced MOSFET process technology Special .
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VDSS
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Advanced trench MOSFET process technology Spe.
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Main Product Characteristics:
VDSS
30V
RDS(on) 3.6mΩ(Typ.)
ID
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TO-252 (DPAK)
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Advanced MOSFET process technology S.
SSF3006DBC - MOSFET
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Main Product Characteristics:
VDSS
30V
RDS(on) 4.2mΩ(Typ.)
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Advanced MOSFET process technology .
SSF3014 - N-Channel MOSFET
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Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c.
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(Silikron Semiconductor Co)
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SSF3035L - MOSFET
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Main Product Characteristics:
VDSS RDS(on)
ID
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-6A ①
SOT23-3
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Advanced MOSFET process technology Special.
SSF3036C - 30V Complementary MOSFET
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Main Product Characteristics
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 32.4mohm 61.6mohm
ID 4A -3.6A
Features and Benefits
Advanced Process Technology.