SSF3022
SilikrON Semiconductor ↗ Co
399.10kb
N-channel mosfet. The SSF3022 is a new generation of middle voltage and high current N –Channel enhancement mode trench power MOSFET. T
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SSF3022D - N-Channel MOSFET
(Silikron Semiconductor Co)
SSF3022D
Feathers: Advanced trench process technology Ultra low Rdson, typical 16mohm High avalanche energy, 100% test Fully characterized ava.
SSF3028C1 - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 28mohm(typ.)
ID 21A Features and Benefits:
TO-252
Advanced MOSFET process technology Special .
SSF3002EG1 - MOSFET
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Main Product Characteristics:
VDSS
30V
RDS(on) 1ohm(typ.)
ID 0.5A①
SOT23
Features andBenefits:
Advanced trench MOSFET process technology Spe.
SSF3006DB - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 3.6mΩ(Typ.)
ID
90A
TO-252 (DPAK)
Features and Benefits:
Advanced MOSFET process technology S.
SSF3006DBC - MOSFET
(Silikron)
Main Product Characteristics:
VDSS
30V
RDS(on) 4.2mΩ(Typ.)
ID
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TO-252 (DPAK)
Features and Benefits:
Advanced MOSFET process technology .
SSF3014 - N-Channel MOSFET
(Silikron Semiconductor Co)
SSF3014 ..
Feathers: Advanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and c.
SSF3018 - N-Channel MOSFET
(Silikron Semiconductor Co)
..
SSF3018
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density c.
SSF3018D - N-Channel MOSFET
(Silikron Semiconductor Co)
.. SSF3018D
Feathers: Advanced trench process technology Special designed for Convertors and power controls High density c.
SSF3035L - MOSFET
(Silikron)
Main Product Characteristics:
VDSS RDS(on)
ID
-30V 22mΩ (typ.)
-6A ①
SOT23-3
Features and Benefits:
Advanced MOSFET process technology Special.
SSF3036C - 30V Complementary MOSFET
(GOOD-ARK)
Main Product Characteristics
NMOS
PMOS
VDSS
30V
-30V
RDS(on) 32.4mohm 61.6mohm
ID 4A -3.6A
Features and Benefits
Advanced Process Technology.
