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SE6050B, SE6050B-Sino N-Channel MOSFET

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Description

SE6050B N-Channel Enhancement-Mode MOSFET Revision: A General .
This type used advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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This datasheet PDF includes multiple part numbers: SE6050B, SE6050B-Sino. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
SE6050B, SE6050B-Sino
Manufacturer
Sino-IC
File Size
430.10 KB
Datasheet
SE6050B-Sino-IC.pdf
Description
N-Channel MOSFET
Note
This datasheet PDF includes multiple part numbers: SE6050B, SE6050B-Sino.
Please refer to the document for exact specifications by model.

Features

* For a single MOSFET
* VDS = 60V
* RDS(ON) = 11mΩ @ VGS=10V Pin configurations See Diagram below G D S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Total Power Dissipation @TA=25℃ Derating factor Single pulse avalanche

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