Description
Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through FOM
Simple Drive Requirement
Small Package Outline
Surface Mount Device
Features
- For a single MOSFET.
- VDS = 80V.
- RDS(ON) = 6.8mΩ @ VGS=10
Pin configurations
See Diagram below
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed
Total Power Dissipation @TA=25℃
Operating Junction Temperature Range
Symbol VDS VGS
ID
PD TJ
Rating 80 ±20 100 370 125
-55 to 175
Units V V
A
W ℃
ShangHai Sino-IC Microelectronic Co. , Ltd. 1.
SE80100
Electrical Characteristics (TJ=25℃ unless otherwise noted)
Symbol
Para.
SE80100-Sino-IC.pdf