Part number:
SM3425NHQA
Manufacturer:
Sinopower
File Size:
251.96 KB
Description:
N-channel mosfet.
* 30V/25A, RDS(ON) = 5.2mW(max.) @ VGS =10V RDS(ON) = 8.3mW(max.) @ VGS =4.5V
* ESD protection
* Lower Qg and Qgd for high-speed switching
* Lead Free and Green Devices Available (RoHS Compliant) Pin Description DDDD S S SG DFN3.3x3.3A-8_EP (5,6,7,8) DD DD Applications (4) G
SM3425NHQA Datasheet (251.96 KB)
SM3425NHQA
Sinopower
251.96 KB
N-channel mosfet.
📁 Related Datasheet
SM3422NSQA - N-Channel MOSFET
(Sinopower)
SM3422NSQA
N-Channel Enhancement Mode MOSFET
Features
• 16V/30A RDS(ON)=4.9mΩ(max.)@VGS=4.5V RDS(ON)=6.6mΩ(max.)@VGS=2.5V
• 100% UIS + Rg Tested • R.
SM3424NHQA - N-Channel MOSFET
(Sinopower)
SM3424NHQA
®
N-Channel Enhancement Mode MOSFET
Features
Pin Description
· 30V/77A,
RDS(ON)= 3.4mW (Max.) @ VGS=10V RDS(ON)= 5.1mW (Max.) @ VGS=4.5.
SM3426NHQA - N-Channel MOSFET
(Sinopower)
SM3426NHQA
®
N-Channel Enhancement Mode MOSFET
Features
· 30V/20A,
RDS(ON) = 7.5mW(max.) @ VGS =10V RDS(ON) = 12.5mW(max.) @ VGS =4.5V
· ESD protect.
SM3427DSQA - Dual N-Channel MOSFET
(Sinopower)
SM3427DSQA
Dual N-Channel Enhancement Mode MOSFET
Features
• 30V/8A RDS(ON)=12.8mΩ(max.)@VGS=10V RDS(ON)=17.6mΩ(max.)@VGS=4.5V
• 100% UIS + Rg Teste.
SM3429BSQA - Dual P-Channel Enhancement Mode MOSFET
(Sinopower)
SM3429BSQA
Dual P-Channel Enhancement Mode MOSFET
Features
• -20V/-19A* RDS(ON)=29mΩ(max.)@VGS=-4.5V RDS(ON)=40mΩ(max.)@VGS=-2.5V RDS(ON)=60mΩ(max.).
SM340 - TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
(Dc Components)
.
SM3401NSQG - N-Channel MOSFET
(Sinopower)
SM3401NSQG
Features
· 30V/50A,
RDS(ON) =2.8mW(max.) @ VGS =10V RDS(ON) =3.6mW(max.) @ VGS =4.5V
· 100% UIS + Rg Tested · Avalanche Rated · Reliable an.
SM34020A - Graphics System Processor
(Texas Instruments)
Not Remended for New Designs
SM34020A
GRAPHICS SYSTEM PROCESSOR
SGUS057 − FEBRUARY 2005
D Class B High-Reliability Processing D 1-µm CMOS Techn.