SGA-8343Z LOW NOISE HIGH GAIN SIGE HBT

Sirenza Microdevices

Description

Product .
Sirenza Microdevices’ SGA-8343 is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to.

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Datasheet Specifications

Part number: SGA-8343Z
Manufacturer: Sirenza Microdevices
File Size: 99.45 KB
Datasheet: SGA-8343Z_SirenzaMicrodevices.pdf
Description: LOW NOISE HIGH GAIN SIGE HBT

Features

* Now Available in Lead Free, RoHS Compliant, & Green Packaging
* DC-6 GHz Operation
* 0.9 dB NFMIN @ 0.9 GHz
* 24 dB Gmax @ 0.9 GHz
* |GOPT|=0.10 @ 0.9 GHz
* OIP3 = +28 dBm, P1dB = +9 dBm
* Low Cost, High Performance, Versatility Gain, Gmax (

Applications

* where high linearity is not required. The matte tin finish on Sirenza’s lead-free package utilizes a post annealing process to mitigate tin whisker formation and is RoHS compliant per EU Directive 2002/95. This package is also manufactured with green molding compounds that contain no antimony trioxi

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📁 Related Datasheet

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SGA-8343Z LOW NOISE HIGH GAIN SIGE HBT Sirenza Microdevices

Sirenza Microdevices SGA-8343Z-like datasheet