Datasheet Specifications
- Part number
- SLD-1000
- Manufacturer
- Sirenza Microdevices
- File Size
- 334.99 KB
- Datasheet
- SLD-1000_SirenzaMicrodevices.pdf
- Description
- 4 Watt Discrete LDMOS FET
Description
Product .
Features
* 4 Watt Output P1dB Single Polarity Operation 19dB Gain at 900 MHz XeMOS IITM LDMOS Integrated ESD Protection, Class 1B Aluminum Topside Metallization Gold Backside Metallization Gate Manifold Drain Manifold Source - Backside Contact RF Specifications Symbol Frequency Gain Efficiency Linearity RTHApplications
* requiring high linearity and efficiency. The SLD-1000 is typically used as a driver or output stage for power amplifier, or transmitter applications. These robust power transistors are fabricated using Sirenza’s high performance XEMOS IITM process. SLD-1000 4 Watt Discrete LDMOS FET -Bare Die FuncSLD-1000 Distributors
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