SLD-635-P5-C-N-RG-250-01 Datasheet (36.75 KB)
SLD-635-P5-C-N-RG-250-01
UNION OPTRONICS
36.75 KB
635nm red laser diode.
635nm Laser Diode Chips
635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-250-01
Specifications (1) Size : (2) Device: (3) Structure:
250
*300
*10.
📁 Related Datasheet
SLD-635-P5-C-N-RG-300-05 - 635nm Red Laser Diode
(UNION OPTRONICS)
635nm Laser Diode Chips
635nm Red Laser Diode Chips SLD-635-P5-C-N-RG-300-05
■Specifications
(1) Size : (2) Device: (3) Structure:
300*300*100μm Las.
SLD-635-P5-RG-466-1 - 635nm Red Laser Diode
(UNION OPTRONICS)
635nm Laser Diode
635nm Red Laser Diode SLD-635-P5-RG-466-1
■Specifications (1) Device: (2) Structure:
Laser Diode TO-18(φ5.6mm)
■External dimensio.
SLD-650-P5-C-300-04 - 650nm Red Laser Diode
(UNION OPTRONICS)
650nm Laser Diode Chips
650nm Red Laser Diode Chips SLD-650-P5-C-300-04
■Specifications (1) Size : (2) Device: (3) Structure:
250*300*100μm Laser di.
SLD-650-P5-CS-HR4-04 - 650nm Red Laser Diode
(UNION OPTRONICS)
SLD-650-P5-CS-HR4-04
650nm Laser Diode chip on Submount
UNION OPTRONICS CORP.
650nm Red Laser Diode chip on Submount
SLD-650-P5-CS-HR4-04
Descrip.
SLD-1000 - 4 Watt Discrete LDMOS FET
(Sirenza Microdevices)
Product Description
Sirenza Microdevices’ SLD-1000 is a robust 4 Watt high performance LDMOS transistor die, designed for operation from 10 to 2700MHz.
SLD-1026Z - 3 Watt Discrete LDMOS
(Sirenza Microdevices)
Preliminary
SLD-1026Z
Product Description
Sirenza Microdevices’ SLD-1026Z is a robust 3 Watt high performance LDMOS transistor designed for operation.
SLD-1083CZ - 4 Watt Discrete LDMOS FET
(Sirenza Microdevices)
SLD-1083CZ
Product Description
Sirenza Microdevices’ SLD-1083CZ is a robust 4 Watt high performance LDMOS transistor designed for operation from to 27.
SLD-1083CZ - 4 WATT DISCRETE LDMOS FET
(RFMD)
SLD-1083CZ 4 Watt Discrete LDMOS FET in Ceramic Package
NOT FOR NEW DESIGNS
SLD-1083CZ
4 WATT DISCRETE LDMOS FET IN CERAMIC PACKAGE
RFMD Green, RoHS .
