SXT-289 Datasheet (Sirenza Microdevices) - Medium Power GaAs HBT Amplifier

SXT-289, Medium Power GaAs HBT Amplifier

Sirenza Microdevices’ SXT-289 amplifier is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) MMIC housed in low-cost surface-mountable plastic package.

These HBT MMICs are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from

SXT-289 Features

* Patented High Reliability GaAs HBT Technology

* High Output 3rd Order Intercept : +42 dBm typ.

* at 2450 MHz Surface-Mountable Power Plastic Package IP3 P1dB Gain Applications

* Balanced Amplifier Configuration App. Note (AN-011) 1960 MHz 2140 MHz 2450 MHz