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SMCTTA32N14A10 Advanced Pulse Power Device N-MOS VCS

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Description

SMCT TA32N14A10 Advanced Pulse Power Device N-MOS VCS, ThinPakTM .
This voltage controlled Solidtron (VCS) discharge switch utilizes an n-type MOS-Controlled Thyristor mounted on a ThinPakTM, ceramic "chip-scale" hybr.

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Datasheet Specifications

Part number
SMCTTA32N14A10
Manufacturer
Solidtron
File Size
706.75 KB
Datasheet
SMCTTA32N14A10_Solidtron.pdf
Description
Advanced Pulse Power Device N-MOS VCS

Features

* the high peak current capability and low Onwww. datasheet4u. com state voltage drop common to SCR thyristors combined with extremely high dI/dt capability. This semiconductor is intended for the control of high power circuits with the use of very small amounts of input energy and is ideally suited for

Applications

* The ThinPakTM Package is a perforated, metalized ceramic substrate attached to the silicon using 302oC solder. An epoxy underfill is applied to protect the high voltage termination from debris. All exterior metal surfaces are tinned with 63pb/37sn solder providing the user with a circuit ready part

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