3SK165A Datasheet, Fet, Sony Corporation

3SK165A Features

• Fet
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz
• High gain: Ga = 20dB (typ) at 800MHz
• High stability Application UHF band amplifier,

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Part number:

3SK165A

Manufacturer:

Sony Corporation

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59.72kb

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📄 Datasheet

Description:

Gaas n-channel dual gate mes fet. The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of app

3SK165A Application

• Applications including cellular, cordless phone. Features
• Low voltage operation
• Low noise: NF = 1.2dB (typ.) at 800MHz

TAGS

3SK165A

Sony Corporation

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