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3SK165A - GaAs N-channel Dual Gate MES FET

Description

The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

This FET is suitable for a wide range of applications including cellular, cordless phone.

Features

  • Low voltage operation.
  • Low noise: NF = 1.2dB (typ. ) at 800MHz.
  • High gain: Ga = 20dB (typ) at 800MHz.
  • High stability.

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3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.
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