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3SK165A GaAs N-channel Dual Gate MES FET

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Description

3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office..
The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

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Datasheet Specifications

Part number
3SK165A
Manufacturer
Sony Corporation
File Size
59.72 KB
Datasheet
3SK165A_SonyCorporation.pdf
Description
GaAs N-channel Dual Gate MES FET

Features

* Low voltage operation
* Low noise: NF = 1.2dB (typ. ) at 800MHz
* High gain: Ga = 20dB (typ) at 800MHz

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