3SK166A - GaAs N-channel Dual Gate MES FET

Description

The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance.

Features

Low voltage operation.
Low noise: NF = 1.2dB (typ. ) at 800MHz.
High gain: Ga = 20dB (typ) at 800MHz.
High stability.

Sony Corporation

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Datasheet Details

Part number	3SK166A
Manufacturer	Sony Corporation
File Size	72.74 KB
Description	GaAs N-channel Dual Gate MES FET
Datasheet	3SK166A Datasheet
Additional preview pages of the 3SK166A datasheet.

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Full PDF Text Transcription

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3SK166A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.

Published: Mar 30, 2005 |