Datasheet Summary
GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office.
Description The 3SK166A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. The circuit matching is easier to be made for all UHF band, resulting in the excellent performance, due to the optimal design of input impedance. Features
- Low voltage operation
- Low noise: NF = 1.2dB (typ.) at 800MHz
- High gain: Ga = 20dB (typ) at 800MHz
- High stability Application UHF band amplifier, oscillator Structure GaAs N-channel dual-gate metal semiconductor field-effect transistor...