3SK165A - GaAs N-channel Dual Gate MES FET

Description

The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification.

This FET is suitable for a wide range of applications including cellular, cordless phone.

Features

Low voltage operation.
Low noise: NF = 1.2dB (typ. ) at 800MHz.
High gain: Ga = 20dB (typ) at 800MHz.
High stability.

Sony Corporation

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Datasheet Details

Part number	3SK165A
Manufacturer	Sony Corporation
File Size	59.72 KB
Description	GaAs N-channel Dual Gate MES FET
Datasheet	3SK165A Datasheet
Additional preview pages of the 3SK165A datasheet.

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3SK165 - GaAs N-channel Dual Gate MES FET
3SK166A - GaAs N-channel Dual Gate MES FET

Full PDF Text Transcription

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3SK165A GaAs N-channel Dual Gate MES FET For the availability of this product, please contact the sales office. Description The 3SK165A is an N-channel dual gate GaAs MES FET for UHF band low-noise amplification. This FET is suitable for a wide range of applications including cellular, cordless phone. Features • Low voltage operation • Low noise: NF = 1.2dB (typ.

Published: Mar 30, 2005 |