* Super high density cell design for low R DS(ON). Rugged and reliable. SO-8 package. Pb free. G1 (2) S1(1) G2 (4) S2(3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS
SSM4953
South Sea Semiconductor
168.06 KB
Dual p-channel mosfet.
SSM4953 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS (V) -30V SO-8 8 7 6 5 ID (A) -4.5A RDS(ON) (mΩ) Max 60 @VGS = -10V 1 95 @VGS = .
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