* Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount package. G (4) S(1, 2, 3) ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed b o o Symbol VDS VGS ID IDM a L
SSM4431
South Sea Semiconductor
221.59 KB
P-channel mosfet.
SSM4431 P-Channel Enhancement Mode MOSFET Product Summary VDS (V) ID (A) RDS(ON) (mΩ) Max 45 @VGS = - 10V - 30V - 6.0A 70 @VGS = - 5V 80 @VGS = - 4.5V.
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