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SSM8405
Dual Enhancement Mode MOSFET
Product Summary (N-Channel)
VDS (V)
30V
8
SO-8
7 6 5
ID (A)
7A
RDS(ON) (mΩ) Max 25 @VGS = 10V 35 @VGS = 5V 40 @VGS = 4.5V
1 2 3
4
D1 (7,8)
D2 (5,6)
Product Summary (P-Channel)
VDS (V) ID (A)
RDS(ON) (mΩ) Max 45 @VGS = - 10V - 30V - 5A 75 @VGS = - 5V 90 @VGS = - 4.5V
S1 (1) S2 (3) G1 (2) G2 (4)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ Ta -Pulsed
b
o
Symbol
VDS VGS 25 C 70 C
o o
N-Channel P-Channel Limited Limited
Unit
V
30 + - 25 7 6 30 1.6 2.0 1.44
-30 + - 25 -5 -4.5 -20 -1.