Click to expand full text
SSM9926
Dual N-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A) RDS(ON) (mΩ) Max 30 @ VGS = 4.0V 20V 5A 40 @ VGS = 2.5V
SO-8
FEATURES ◆Super high dense cell design for low RDS(ON). ◆Rugged and reliable. ◆Surface Mount Package.
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter
Drain-Source Voltage Gate-Soure Voltage Drain Current-Continuous @Tc=25oC -Pulsedb Drain-Source Diode Forward Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range
o
Symbol
VDS VGS ID IDM IS PD TJ,TSTG
Limit 20 ±10 5 25 1.7 2 -55 to 150
Unit
V V A A A W
o
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambienta RθJA 62.
SSM9926 Datasheet
