Datasheet Summary
N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS
Low on-resistance Capable of 2.5V gate drive Low drive current Surface-mount package
Description
D2 D2 D1 D1
SO-8
G2 S2
G1 S1
Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.
BV DSS RDS(ON) ID
20V 30mΩ
6A
D1 D2 G1 G2
S1...