SSM9926TGO Datasheet | Silicon Standard

DESCRIPTION N-CHANNEL ENHANC8 EMENT MODE POWER MOSFET A t D1 D2 G1 G2 S1 S2 The Advanced Power MOSFETs from Silicon Standard Corp. provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. BVDSS RDS(ON) ID 20V 32mΩ 4.7A Pb-free; Ro HS-pliant ABSOLUTE MAXIMUM RATINGS G2 S2 S2 D2 TSSOP-8 G1 S1 S1 D1 Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THETRMAL DATA Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ±12 4.7 3.8 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/℃ ℃ ℃ Max. Value 125 Unit ℃/W 03/11/2007...