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SSM9926GEO Datasheet N-channel Enhancement Mode Power MOSFET

Manufacturer: Silicon Standard

Overview: SSM9926GEO N-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Low on-resistance Capable of 2.

Datasheet Details

Part number SSM9926GEO
Manufacturer Silicon Standard
File Size 139.43 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Datasheet SSM9926GEO-SiliconStandard.pdf

General Description

Power MOSFETs from Silicon Standard provide the designer with the best bination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness.

RoHS pliant.

Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-amb Thermal Resistance Junction-ambient BV DSS R DS(ON) ID 20V 28mΩ 4.6A D1 D2 G1 G2 S1 S2 Rating 20 ± 12 4.6 3.7 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max.

SSM9926GEO Distributor