SSM9926GEO Overview
Description
Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Parameter Rthj-amb BV DSS R DS(ON) ID 20V 28mΩ 4.6A D1 D2 G1 G2 S1 S2 Rating 20 ± 12 4.6 3.7 20 1 0.008 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max.
