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SSM4431
P-Channel Enhancement Mode MOSFET
Product Summary
VDS (V) ID (A)
RDS(ON) (mΩ) Max 45 @VGS = - 10V - 30V - 6.0A 70 @VGS = - 5V 80 @VGS = - 4.5V
1 2 3 8 7 6 5
SO-8
4
D (5, 6, 7, 8)
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Surface Mount package.
G (4) S(1, 2, 3)
ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous @ TJ = 125 C -Pulsed
b o
o
Symbol
VDS VGS ID IDM
a
Limit
- 30 + - 25 - 6.0 - 30 - 1.7 2.
SSM4431 Datasheet
