FS511, Fortune Semiconductor
..
Fo r t un e
Semiconductor Corporation
FS511
18-bit ADC with 1 low noise OPAMP.
Fo r t un e
Semiconductor Corporation
Dat.
FS50, Feeling Technology
FEELING TECHNOLOGY
LINEAR HALL-EFFECT SENSORS
Features
Extremely Sensitive Flat Response to 23 KHz Low-Noise Output 2.7V to 7V Operation Available in .
FS500R17OE4D, Infineon
Technische Information / Technical Information
IGBT-Modul IGBT-Module
FS500R17OE4D
EconoPACK™+ Modul mit Trench/Feldstopp IGBT4 und Emitter Control.
FS500R17OE4DP, Infineon
FS500R17OE4DP
EconoPACK™+ Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 3 Diode und PressFIT / bereits aufgetragenem Thermal Interface Mater.
FS50AS-03, Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET
FS3UM-18A
HIGH-SPEED SWITCHING USE
FS3UM-18A
OUTLINE DRAWING
10.5MAX. r
3.2 7.0
Dimensions in mm
4.5 1.3
16
φ 3.6
3..
FS50ASJ-03, Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET
FS3VS-10
HIGH-SPEED SWITCHING USE
FS3VS-10
OUTLINE DRAWING
r
1.5MAX.
Dimensions in mm 4.5 1.3
10.5MAX.
1.5MAX. 8.6 ±.
FS50ASJ-03F, Renesas
FS50ASJ-03F
High-Speed Switching Use Nch Power MOS FET
Features
• Drive Voltage : 4V • VDSS : 30 V • rDS(ON) (max) : 12.2 mΩ • ID : 50 A • Recovery T.
FS50KM-06, Mitsubishi Electric Semiconductor
MITSUBISHI Nch POWER MOSFET
FS3VS-18A
HIGH-SPEED SWITCHING USE
FS3VS-18A
OUTLINE DRAWING
r
Dimensions in mm 4.5 1.3
1.5MAX. 8.6 ± 0.3 9.8 ± 0.5
.