SST60R280SFD - 600V N-Channel Super-Junction MOSFET

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Datasheet Details

Part number	SST60R280SFD
Manufacturer	Super Semiconductor
File Size	1.08 MB
Description	600V N-Channel Super-Junction MOSFET
Datasheet	SST60R280SFD-SuperSemiconductor.pdf

SST60R280SFD Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
Fast-Recovery body diode.
Extremely Low Reverse Recovery Charge.
650V @TJ = 150 ℃.
Typ. RDS(on) = 0.24Ω.
Ultra Low Gate Charge (typ. Qg = 23nC).
100% avalanche tested SST60R280SFD TO-252 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Puls.

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