SST65R190S3 - 650V N-Channel Super-Junction MOSFET

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Datasheet Details

Part number	SST65R190S3
Manufacturer	Super Semiconductor
File Size	633.65 KB
Description	650V N-Channel Super-Junction MOSFET
Datasheet	SST65R190S3-SuperSemiconductor.pdf

SST65R190S3 Product details

Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

Multi-Epi process SJ-FET.
700V @TJ = 150 ℃.
Typ. RDS(on) = 160mΩ.
Ultra Low Gate Charge (typ. Qg = 29nC).
100% avalanche tested.
Integrated Zener diode for high ESD robustness (>2kV HBM) SST65R190S3 TO-252 Absolute Maximum Ratings Symbol Parameter VDSS ID IDM VGSS EAS IAS dv/dt Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalan.

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