SST65R190S3 650V N-Channel Super-Junction MOSFET

Description

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 650V Super Junction Power MOSFET Gen-Ⅲ SST65R190S3 Rev.1.2 F.
SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lo.

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Datasheet Specifications

Part number: SST65R190S3
Manufacturer: Super Semiconductor
File Size: 633.65 KB
Datasheet: SST65R190S3-SuperSemiconductor.pdf
Description: 650V N-Channel Super-Junction MOSFET

Features

* Multi-Epi process SJ-FET
* 700V @TJ = 150 ℃
* Typ. RDS(on) = 160mΩ
* Ultra Low Gate Charge (typ. Qg = 29nC)
* 100% avalanche tested
* Integrated Zener diode for high ESD robustness (>2kV HBM) SST65R190S3 TO-252 Absolute Maximum Ratings Symbol Pa

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SST65R190S3 650V N-Channel Super-Junction MOSFET Super Semiconductor

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