AN01 - 8 Channel Power MOSFET Array
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AN01 8 Channel Power MOSFET Array Monolithic N-channel Enchancement Mode Ordering Information BVOS~ BVDGS (min) 160V 200V 300V 320V 400V ROS(ON) (max) 350(1 300(1 300(1 350(1 350(1 10(ON) (min) 25mA 25mA 25mA 25mA 25mA loss @Vos= 100V Max 1nA - - - - 10ss @Vos= 250V Max - - 1nA - 18-Lead Ceramic DIP AN0116NB AN0120NB AN0130NB AN0132NB AN0140NB Same as 50-20 with 300 mil wide body.
Average current per channel, measured with all eight chan
AN01 Features
* D Low drain to source leakage for AN0116 and AN0132 D 200-volt to 400-volt capability D Interfaces directly to CMOS logic D 8 independent channels D Low crosstalk between channels D Low power dissipation D Pin compatible with industry standard driver array D Freedom from secondary breakd
