TN2106 N-Channel Enhancement-Mode Vertical DMOS FETs

Supertex Inc

Description

TN2106 N-Channel Enhancement-Mode Vertical DMOS FET .
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturi.

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Datasheet Specifications

Part number: TN2106
Manufacturer: Supertex Inc
File Size: 441.83 KB
Datasheet: TN2106_SupertexInc.pdf
Description: N-Channel Enhancement-Mode Vertical DMOS FETs

Features

* Free from secondary breakdown
* Low power drive requirement
* Ease of paralleling
* Low CISS and fast switching speeds
* Excellent thermal stability
* Integral source-drain diode
* High input impedance and high gain
* Complementary N- and P-channel devices Applicati

Applications

* Logic level interfaces - ideal for TTL and CMOS
* Solid state relays
* Battery operated systems
* Photo-voltaic drives
* Analog switches
* General purpose line drivers

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TN2106 N-Channel Enhancement-Mode Vertical DMOS FETs Supertex Inc

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