TN2106 Datasheet - Supertex Inc

N-Channel Enhancement-Mode Vertical DMOS FETs

TN2106 Features

* Free from secondary breakdown

* Low power drive requirement

* Ease of paralleling

* Low CISS and fast switching speeds

* Excellent thermal stability

* Integral source-drain diode

* High input impedance and high gain

* Complementary N- and P-channel devices Applicati

TN2106 General Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive t.

TN2106 Datasheet (441.83 KB)