TN2106 - N-Channel Enhancement-Mode Vertical DMOS FETs

Supertex Inc

TN2106 Datasheet Preview — Preview of TN2106 PDF

Datasheet Details

Part number	TN2106
Manufacturer	Supertex Inc
File Size	441.83 KB
Description	N-Channel Enhancement-Mode Vertical DMOS FETs
Datasheet	TN2106_SupertexInc.pdf

TN2106 Product details

Description

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.

Features

Free from secondary breakdown.
Low power drive requirement.
Ease of paralleling.
Low CISS and fast switching speeds.
Excellent thermal stability.
Integral source-drain diode.
High input impedance and high gain.
Complementary N- and P-channel devices.

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Other Datasheets by Supertex Inc

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Published: Apr 16, 2005 |