TN2130 Datasheet - Supertex Inc

TN2130 N-Channel Enhancement-Mode Vertical DMOS FETs

This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive t.

TN2130 Features

* Free from secondary breakdown

* Low power drive requirement

* Ease of paralleling

* Low CISS and fast switching speeds

* Excellent thermal stability

* Integral source-drain diode

* High input impedance and high gain Applications

* Logic level interfaces

TN2130_SupertexInc.pdf