* ❏ Free from secondary breakdown ❏ Low power drive requirement ❏ Ease of paralleling ❏ Low CISS and fast switching speeds ❏ Excellent thermal stability ❏ Integral Source-Drain diode ❏ High input impedance and high gain ❏ Complementary N- and P-channel devices Advanced DMOS Technology These enhanceme
VN3515L
Supertex Inc
441.95 KB
N-channel enhancement-mode vertical dmos fets.
VN3515L VN4012L N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information BVDSS / BVDGS 350V 400V RDS(ON) (max) 15Ω 12Ω VGS(th) (max) 1.8V 1..
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