* o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low C1SS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhanc
VP01A
Supertex
244.40 KB
P-channel enhancement-mode vertical dmos power fets.
" !iupertexinc. VP01A P-Channel Enhancement-Mode Vertical DMOS Power FETs Ordering Information BVoss I BVoos -40V -60V -90V ROS(ON) (max) 8n 8n 8.
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