VP0109 - P-Channel Vertical DMOS FETs
This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process.
This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coef
VP0109 Features
* Free from secondary breakdown
* Low power drive requirement
* Ease of paralleling
* Low CISS and fast switching speeds
* Excellent thermal stability
* Integral source-drain diode
* High input impedance and high gain Applications
