Datasheet4U Logo Datasheet4U.com

1N5361B

5.0W Zener Diodes

1N5361B Features

* Glass passivated junction

* Complete voltage range 3.3 to 200V

* High peak reverse power dissipation

* High reliability

* Low leakage current

* RoHS Compliance 5.0W Zener Diodes 1N5333B

* 1N5388B 1.5KE Mechanical Data Case: Epoxy: Lead: Po

1N5361B General Description

Power Dissipation Non Repetitive Peak Zener Dissipation (t=8.3ms) Value 5.0 180 Unit Conditions W TA=75 °C W VF Max. Forward Voltage Drop 1.2 V IF=3.0A Rthj-a Max. Thermal Resistance at: 10mm Lead Length 20 °C/W TJ,TSTG Operating Junction and Storage Temperature Range -55 to 175 °C TAITR.

1N5361B Datasheet (182.61 KB)

Preview of 1N5361B PDF

Datasheet Details

Part number:

1N5361B

Manufacturer:

TAITRON

File Size:

182.61 KB

Description:

5.0w zener diodes.

📁 Related Datasheet

1N5361 5W SILICON PLANAR ZENER DIODES (JINAN JINGHENG)

1N5361 5.OWATT SURMETIC 40 SILICON ZENER DIODES (Motorola)

1N5361 5.OWATT SURMETIC 40 SILICON ZENER DIODES (Motorola)

1N5361A SILICON ZENER DIODE (EIC)

1N5361B Silicon Zener Diode (Motorola)

1N5361B ZENER DIODE (GME)

1N5361B 5.0W ZENER DIODE (WON-TOP)

1N5361B Zener Diode (NTE)

1N5361B 5W ZENER DIODE (Diodes Incorporated)

1N5361B Silicon 5 Watt Zener Diodes (Microsemi)

TAGS

1N5361B 5.0W Zener Diodes TAITRON

Image Gallery

1N5361B Datasheet Preview Page 2 1N5361B Datasheet Preview Page 3

1N5361B Distributor