BC817-25 Overview
Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation , Junction to Ambient (Note 1) 225 mW TA=25 ˚C 1.8 mW/°C Derate above.
BC817-25 Key Features
- NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier
