Download the BC817-25 datasheet PDF.
This datasheet also covers the BC817-16 variant, as both devices belong to the same smd general purpose transistor family and are provided as variant models within a single manufacturer datasheet.
General Description
Value
Unit
Conditions
VCEO VCBO VEBO
IC
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
45 V 50 V 5.0 V 500 mA
PD RθJA
Total Device Power Dissipation Thermal Resistance, Junction to Ambient (Note 1)
225 mW
TA=25 ˚C
1.8
mW/°C
Derate above 25 ˚C
55
Key Features
NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier.
Full PDF Text Transcription for BC817-25 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
BC817-25. For precise diagrams, and layout, please refer to the original PDF.
SMD General Purpose Transistor (NPN) BC817-16/BC817-25/BC817-40 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and ...
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Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Marking Information BC817-16 BC17-25 BC817-40 Marking Code 6A 6B 6C SOT-23 Maximum Ratings (T Ambient=25ºC unless noted otherwise) Symbol Description Value Unit Conditions VCEO VCBO VEBO IC Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current 45 V 50 V 5.0 V 500 mA PD RθJA Total Device Power Dissipation Thermal Resistance, Junction to Ambient (Note 1) 225 mW TA=25 ˚
BC817-25 Datasheet
