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IRFS830 N-Channel Power MOSFET

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Description

500V/3.1A N-Channel Power MOSFET (Discontinued) IRFS830 SAMSUNG General .
Low on resistance. Improved inductive ruggedness. Fast switching time. Rugged polysilicon gate cell structure. Lower input c.

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Datasheet Specifications

Part number
IRFS830
Manufacturer
TAITRON
File Size
594.38 KB
Datasheet
IRFS830-TAITRON.pdf
Description
N-Channel Power MOSFET

Features

* VDSS=500V, ID=3.1A
* RDS(ON) ≤ 1.5 Ω @ VGS=10V Pin Configuration 1: Gate 2: Drain 3: Source TO-220F TAITRON INTERNET SUPER STORE (TISS) www. taitroncomponents. com Tel: (800)-TAITRON (800)-824-8766 (661)-257-6060 Fax: (800)-TAITFAX (800)-824-8329 (661)-257-6415 Rev. A/PQ Page 1 of 10 IRFS

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