MMBTA13 Datasheet (TAITRON) - SMD Darlington Transistor

MMBTA13, SMD Darlington Transistor

MMBTA13 MMBTA14 Marking Code 1M 1N VCBO Collector-Base Voltage 30 VCES Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 10 IC Collector Current 300 Ptot Power Dissipation up to TA=25°C 250 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V

MMBTA13 Features

* This device is designed for applications requiring extremely High current gain at collector currents to 1.0A

* RoHS compliance SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=