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MMBTA14, MMBTA13 Datasheet - TAITRON

MMBTA14 SMD Darlington Transistor

MMBTA13 MMBTA14 Marking Code 1M 1N VCBO Collector-Base Voltage 30 VCES Collector-Emitter Voltage 30 VEBO Emitter-Base Voltage 10 IC Collector Current 300 Ptot Power Dissipation up to TA=25°C 250 TJ Junction Temperature 150 TSTG Storage Temperature Range -55 to +150 Unit V V V.

MMBTA14 Features

* This device is designed for applications requiring extremely High current gain at collector currents to 1.0A

* RoHS compliance SOT-23 Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram Maximum Ratings (T Ambient=

MMBTA13-TAITRON.pdf

This datasheet PDF includes multiple part numbers: MMBTA14, MMBTA13. Please refer to the document for exact specifications by model.
MMBTA14 Datasheet Preview Page 2 MMBTA14 Datasheet Preview Page 3

Datasheet Details

Part number:

MMBTA14, MMBTA13

Manufacturer:

TAITRON

File Size:

157.23 KB

Description:

Smd darlington transistor.

Note:

This datasheet PDF includes multiple part numbers: MMBTA14, MMBTA13.
Please refer to the document for exact specifications by model.

MMBTA14 Distributor

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MMBTA14 MMBTA13 SMD Darlington Transistor TAITRON