TM4953S Datasheet - TECH MOS

TM4953S, Dual P-Channel High Density Trench MOSFET

TECH MOS Technology.Dual P-Channel High Density Trench MOSFET TM4953S TM4953FS(Pb-free) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max - 30V - 4.9.

TM4953S-TECHMOS.pdf

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Datasheet Details

Part number:

TM4953S

Manufacturer:

TECH MOS

File Size:

141.60 KB

Description:

Dual P-Channel High Density Trench MOSFET

Features

* Super high dense cell trench design for low RDS(on).
* Rugged and reliable.
* Surface Mount package. So-8 D1 D1 D2 D2 876 5 1 1234 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousa @ T

TM4953S Distributors

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TM4953S Dual P-Channel High Density Trench MOSFET TECH MOS

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TM4953FS