Description
U Phototransistor Output Optocoupler 4 with at .D w The single components are mounted on one leadframe in Application Circuits for safe protective sep.
The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package.
Features
* According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak
D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VRM
Applications
* Derating Diagram
250 225 200 mA ( mA ) 175 150 125 100 75 50 25 0 0
95 10888
Psi (mW)
Isi (mA)
25
50
75
100 125 150 175 200 Tamb ( °C )
TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96
3 (10)
CNY21N
Electrical Characteristics
Tamb = 25°C
Input (Emitter)
Parameters Forward voltage Breakdown v