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CNY21N Optocoupler

CNY21N Description

Optocoupler with Phototransistor Output .
The CNY21N consists of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 4-lead plastic dual inline package.

CNY21N Features

* According to VDE 0884 D Rated impulse voltage (transient overvoltage) VIOTM = 8 kV peak D Isolation test voltage (partial discharge test voltage) Vpd = 2.8 kV peak D Rated isolation voltage (RMS includes DC) VIOWM = 1000 VRMS (1450 V peak) D Rated recurring peak voltage (repetitive) VIORM = 1000 VR

CNY21N Applications

* Derating Diagram mA ( mA ) 250 225 200 175 150 125 100 75 50 25 0 0 95 10888 Psi (mW) Isi (mA) 25 50 75 100 125 150 175 200 Tamb ( °C ) TELEFUNKEN Semiconductors Rev. A1, 11-Jun-96 3 (10) CNY21N Electrical Characteristics Tamb = 25°C Input (Emitter) Parameters Forward voltage Breakdown vol

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Datasheet Details

Part number
CNY21N
Manufacturer
TEMIC
File Size
91.20 KB
Datasheet
CNY21N-TEMIC.pdf
Description
Optocoupler

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Optocoupler TEMIC
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