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SD213DE - N-Channel Lateral DMOS FETs

This page provides the datasheet information for the SD213DE, a member of the SD211DE N-Channel Lateral DMOS FETs family.

Datasheet Summary

Description

The SD211DE/SST211 series consists of enhancementmode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications.

The SD211 may be used for "5-V analog switching or as a high speed driver of the SD214.

The SD214 is normally used for "10-V analog switching.

Features

  • D Ultra-High Speed Switching.
  • tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode Benefits D High Speed System Performance D Low Insertion Loss at High Frequencies D Low Transfer Signal Loss D Simple Driver Requirement D Single Supply Operation.

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Datasheet preview – SD213DE

Datasheet Details

Part number SD213DE
Manufacturer TEMIC
File Size 87.11 KB
Description N-Channel Lateral DMOS FETs
Datasheet download datasheet SD213DE Datasheet
Additional preview pages of the SD213DE datasheet.
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Full PDF Text Transcription

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SD211DE/SST211 Series N-Channel Lateral DMOS FETs Product Summary Part Number SD211DE SD213DE SD215DE SST211 SST213 SST215 V(BR)DS Min (V) 30 10 20 30 10 20 VGS(th) Max (V) 1.5 1.5 1.5 1.5 1.5 1.5 SD211DE SD213DE SD215DE SST211 SST213 SST215 rDS(on) Max (W) 45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V Crss Max (pF) 0.5 0.5 0.5 0.5 0.5 0.5 tON Max (ns) 2 2 2 2 2 2 Features D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.
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