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MMBT5551LT1

NPN Transistor

MMBT5551LT1 General Description

The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature-55+150°C Junction Temperature +150°C Maximum

* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW
.

MMBT5551LT1 Datasheet (28.24 KB)

Preview of MMBT5551LT1 PDF

Datasheet Details

Part number:

MMBT5551LT1

Manufacturer:

TGS

File Size:

28.24 KB

Description:

Npn transistor.

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TAGS

MMBT5551LT1 NPN Transistor TGS

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