MMBT5551LT1 NPN Transistor

TGS

Description

TIGER ELECTRONIC CO.,LTD MMBT5551LT1 NPN EPITAXIAL PLANAR TRANSISTOR .
The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Maximum Temperatur.

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Datasheet Specifications

Part number: MMBT5551LT1
Manufacturer: TGS
File Size: 28.24 KB
Datasheet: MMBT5551LT1-TGS.pdf
Description: NPN Transistor

Applications

* requiring high Breakdown Voltages. Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature-55+150°C Junction Temperature +150°C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW
* Maximum Voltages and Currents (Ta=25°C) VCBO Collector

MMBT5551LT1 Distributors

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