MMBT5551LT1 NPN Transistor

TGS

MMBT5551LT1 Description

TIGER ELECTRONIC CO.,LTD MMBT5551LT1 NPN EPITAXIAL PLANAR TRANSISTOR .
The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Maximum Temperatur.

MMBT5551LT1 Applications

* requiring high Breakdown Voltages. Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature-55+150°C Junction Temperature +150°C Maximum
* Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW
* Maximum Voltages and Currents (Ta=25°C) VCBO Collector

📥 Download Datasheet

MMBT5551LT1 Datasheet Preview — Preview of MMBT5551LT1 PDF

Datasheet Details

Part number: MMBT5551LT1
Manufacturer: TGS
File Size: 28.24 KB
Datasheet: MMBT5551LT1-TGS.pdf
Description: NPN Transistor

📁 Related Datasheet

MMBT5551L - High Voltage Transistors (ON Semiconductor)
MMBT5551 - NPN Transistor (Formosa MS)
MMBT5551GH - High Voltage Transistors (Zowie Technology)
MMBT5551M3 - NPN High Voltage Transistor (ON Semiconductor)
MMBT5551T - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
MMBT5551W - NPN Transistor (BLUECOLOUR)
MMBT5550 - NPN General Purpose Amplifier (SINLOON)
MMBT5550GH - High Voltage Transistors (Zowie Technology)

📌 All Tags

NPN Transistor TGS

TGS MMBT5551LT1-like datasheet

MMBT5401LT1 - PNP Transistor
MMBT3906LT1 - PNP Transistor