Part number:
MMBT5401LT1
Manufacturer:
TGS
File Size:
27.44 KB
Description:
Pnp transistor.
Datasheet Details
MMBT5401LT1 Features
* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150°C Maximum
* Maximum Power Dissipation Total Power Dissi
Datasheet Details
MMBT5401LT1
TGS
27.44 KB
Pnp transistor.
📁 Related Datasheet
MMBT5401LT1 High Voltage Transistor (Motorola)
MMBT5401LT1 High Voltage Transistor(PNP Silicon) (ON)
MMBT5401LT1 TRANSISTOR (WEJ)
MMBT5401LT1 PNP Transistor (Tuofeng Semiconductor)
MMBT5401LT1G High Voltage Transistor (ON Semiconductor)
MMBT5401LT3G High Voltage Transistor (ON Semiconductor)
MMBT5401L High Voltage Transistor (ON Semiconductor)
MMBT5401 NPN General Purpose Transistor (GME)
MMBT5401LT1 Distributor