MMBT5401LT1 - PNP Transistor
MMBT5401LT1 Features
* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150°C Maximum
* Maximum Power Dissipation Total Power Dissi
