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MMBT5401LT1 Datasheet - TGS

MMBT5401LT1 PNP Transistor

MMBT5401LT1 Features

* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)

* Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings

* Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150°C Maximum

* Maximum Power Dissipation Total Power Dissi

MMBT5401LT1 Datasheet (27.44 KB)

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Datasheet Details

Part number:

MMBT5401LT1

Manufacturer:

TGS

File Size:

27.44 KB

Description:

Pnp transistor.

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MMBT5401LT1 PNP Transistor TGS

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