Description
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages.
Features
- High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA).
- Complements to NPN Type MMBT5551LT1.
Absolute Maximum Ratings.
- Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150°C Maximum.
- Maximum Power Dissipation Total Power Dissipation (Ta=25°C) 250 mW.
- Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage 160 V VCEO Collector to Emitter Voltage 150 V VEBO Emitter to Base Voltage 5 V IC Collector.
MMBT5401LT1-TGS.pdf
