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MMBT5401LT1 PNP Transistor

MMBT5401LT1 Description

TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR .
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown V.

MMBT5401LT1 Features

* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150°C Maximum
* Maximum Power Dissipation Total Power Dissi

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Datasheet Details

Part number
MMBT5401LT1
Manufacturer
TGS
File Size
27.44 KB
Datasheet
MMBT5401LT1-TGS.pdf
Description
PNP Transistor

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PNP Transistor TGS
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