MMBT5401LT1 PNP Transistor

TGS

Description

TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR .
The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. High Collector-Emitter Breakdown V.

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Datasheet Specifications

Part number: MMBT5401LT1
Manufacturer: TGS
File Size: 27.44 KB
Datasheet: MMBT5401LT1-TGS.pdf
Description: PNP Transistor

Features

* High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA)
* Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings
* Maximum Temperatures Storage Temperature -55~+150 °C Junction Temperature +150°C Maximum
* Maximum Power Dissipation Total Power Dissi

MMBT5401LT1 Distributors

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MMBT5401LT1 PNP Transistor TGS

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