HX5N90 MOSFET Datasheet - TIANJIN HUANXIN TECHNOLOGY

HX5N90 Features

Mosfet z RDS(ON) = 2.3Ω@VGS = 10 V z Low gate charge ( typical 31nC) z High ruggedness z Fast switching capability z Avalanche energy specified z Improved dv/dt capability
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Part number:

HX5N90

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TIANJIN HUANXIN TECHNOLOGY

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842.54kb

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📄 Datasheet

Description:

N-channel mosfet. The HX5N90 N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications

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HX5N90 Application

Applications such as switching regulators, switching converters, solenoid, motor drivers, relay drivers.
Features z RDS(ON) = 2.3Ω@VGS = 1

TAGS

HX5N90

N-Channel

MOSFET

TIANJIN HUANXIN TECHNOLOGY

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HX5N90 Datasheet, Mosfet, TIANJIN HUANXIN TECHNOLOGY