Datasheet Specifications
- Part number
- TW107N65C
- Manufacturer
- Toshiba ↗
- File Size
- 840.91 KB
- Datasheet
- TW107N65C-TOSHIBA.pdf
- Description
- Silicon Carbide N-Channel MOSFET
Description
MOSFETs Silicon Carbide N-Channel MOS TW107N65C TW107N65C 1.Applications * Switching Voltage Regulators 2..
Features
* (1) Chip design of 3rd generation (Built-in SiC schottky barrier diode) (2) Low diode forward voltage: VDSF = -1.35 V (typ. ) (3) High voltage: VDSS = 650 V (4) Low drain-source on-resistance: RDS(ON) = 107 mΩ (typ. ) (5) Less susceptible to malfunction due to high threshold voltage: Vth = 3.0 to 5.0TW107N65C Distributors
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